Prof. Andreas Waagis the dean of Faculty of Electronic technique, Infomation technique, and physics, head of Institute of Semiconductor Technology, Braunschweig University of Technology. He is also a professor of Institute of Semiconductor Technology, Ulm University and a Visiting Assistant Professor of Purdue University. Since summer 2008, He was employed as a member of two organization, that is Senate Board for SFBs of the German Research Society (DFG)   and Int. Advisory Committee of the Paul-Drude-Institute, Berlin. In 1997, Pro. Andreas Waag finished his habilitaion in experiment physics on novel wide band gap Ⅱ-Ⅵ semiconductors at University of Würzburg, and now he is engaging in Wide Band Gap Semiconductors: Nitrides and Oxides, Processing and Nanotechnolog, Novel Concepts for Device Applications and so on. More than 440 publications in peer-reviewed journals and conference proceedings, ca. 10 patent filed and pending, H-index = 35 (May 2013 Scopus Search) were published by him and his team. He won Gaede Award of the German Vacuum Society at 1996 for the development of novel II-VI based materials for laser diodes. What’ more Pro Andreas Waag is the first one who demostrate the electrical spin injection into semiconductors (Nature 1999, >1200 citations) and the Beryllium-based II-VI compounds.

 

Ga material is the world‘s semiconductor research frontier and hot spots, and widely used as   microelectronic devices and optoelectronic devices. GaN not only has high thermal stability, but also has strong mechanical strength. Together with diamond and SiC, GaN is known as the the third generation of semiconductor materials, the first generation is Ge, Si semiconductor materials, the second one is GaAs, InP compound semiconductor materials. This report will show the synthetic, analysis and application of 3D GaN nanorods, with examples illustrating the development prospects of GaN nanorods in the field of semiconductor